DocumentCode
3004999
Title
Passive integration on Si for RF circuits in wireless applications
Author
Pulsford, N.J. ; van Beek, J.T.M. ; Van Delden, M.H.W.M. ; Boogaard, A. ; Milsom, R.F.
Author_Institution
Philips Res. Lab., Eindhoven, Netherlands
Volume
4
fYear
1999
fDate
13-19 June 1999
Firstpage
1897
Abstract
A technology is described for the integration of high quality factor inductors and capacitors on high ohmic silicon. The performance is optimised for resonator and matching circuits in RF wireless applications. This is demonstrated by the design and measurement of an integrated output match for a GSM power amplifier which has comparable performance to a conventional hybrid module.
Keywords
capacitors; cellular radio; elemental semiconductors; impedance matching; inductors; radio equipment; silicon; GSM power amplifier; RF wireless circuit; Si; capacitor; inductor; matching circuit; passive integration; quality factor; resonator; silicon substrate; Capacitors; GSM; Impedance matching; Inductors; Integrated circuit measurements; Integrated circuit technology; Power measurement; Q factor; Radio frequency; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location
Anaheim, CA, USA
Print_ISBN
0-7803-5135-5
Type
conf
DOI
10.1109/MWSYM.1999.780344
Filename
780344
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