Title :
Passive integration on Si for RF circuits in wireless applications
Author :
Pulsford, N.J. ; van Beek, J.T.M. ; Van Delden, M.H.W.M. ; Boogaard, A. ; Milsom, R.F.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
A technology is described for the integration of high quality factor inductors and capacitors on high ohmic silicon. The performance is optimised for resonator and matching circuits in RF wireless applications. This is demonstrated by the design and measurement of an integrated output match for a GSM power amplifier which has comparable performance to a conventional hybrid module.
Keywords :
capacitors; cellular radio; elemental semiconductors; impedance matching; inductors; radio equipment; silicon; GSM power amplifier; RF wireless circuit; Si; capacitor; inductor; matching circuit; passive integration; quality factor; resonator; silicon substrate; Capacitors; GSM; Impedance matching; Inductors; Integrated circuit measurements; Integrated circuit technology; Power measurement; Q factor; Radio frequency; Silicon;
Conference_Titel :
Microwave Symposium Digest, 1999 IEEE MTT-S International
Conference_Location :
Anaheim, CA, USA
Print_ISBN :
0-7803-5135-5
DOI :
10.1109/MWSYM.1999.780344
