Title :
InGaN/GaN MQW Nanorods LED Fabricated by ICP-RIE and PEC Oxidation Processes
Author :
Lai, Fang-I ; Huang, H.W. ; Chiu, Ching-Hua ; Lai, C.F. ; Lu, T.C. ; Kuo, H.C. ; Wang, S.C.
Author_Institution :
Yuan-Ze Univ., Taoyuan
Abstract :
The InGaN/GaN nanorods LED was successfully fabricated by ICP-RIE and PEC processes. Compared with as-grown sample, the PL and EL peak-wavelengths of the nanorods with PEC show 8.6 and 10.5 nm blue-shift, respectively.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; oxidation; photoelectrochemistry; plasma materials processing; quantum well devices; spectral line shift; sputter etching; InGaN-GaN; blue-shift; electroluminescence; inductively coupled plasma reactive ion etching; multiple quantum well nanorods; nanorod LED; photoelectrochemical oxidation; photoluminescence; Capacitive sensors; Etching; Gallium nitride; Gold; Light emitting diodes; Oxidation; Plasma temperature; Quantum well devices; Self-assembly; Temperature measurement;
Conference_Titel :
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-55752-834-6
DOI :
10.1109/CLEO.2007.4452607
