DocumentCode
3005191
Title
Electrical deactivation and diffusion of boron in preamorphized ultrashallow junctions: interstitial transport and F co-implant control
Author
Colombeau, B. ; Smith, A.J. ; Cowern, N.E.B. ; Lerch, W. ; Paul, S. ; Pawlak, B.J. ; Cristiano, F. ; Hebras, X. ; Bolze, D. ; Ortiz, C. ; Pichler, P.
Author_Institution
Adv. Technol. Inst., Surrey Univ., Guildford, UK
fYear
2004
fDate
13-15 Dec. 2004
Firstpage
971
Lastpage
974
Abstract
This work presents breakthrough results on the physics and modeling of deactivation and transient enhanced diffusion of boron in preamorphized (PAI) ultrashallow junctions, and the mechanisms by which fluorine co-implantation controls these processes. The results provide a much-needed general physical framework for the evaluation of novel equipment and thermal processes beyond the 50 nm technology node.
Keywords
amorphisation; boron; diffusion; fluorine; interstitials; ion implantation; nanotechnology; thermal properties; B; F; F coimplant control; boron diffusion; electrical deactivation; equipment evaluation; fluorine coimplantation; interstitial transport; nanometer technology; preamorphized ultrashallow junction; thermal processes; Annealing; Boron; Computational modeling; Implants; Physics computing; Predictive models; Process control; Shape; Silicon; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
Print_ISBN
0-7803-8684-1
Type
conf
DOI
10.1109/IEDM.2004.1419348
Filename
1419348
Link To Document