Simulation of high-temperature millisecond annealing-based on atomistic modeling of boron diffusion/activation in silicon

An advanced annealing technique.where high temperature is applied for a ~ f ewm illiseconds was investigated through an atomistic process simulation program. In this basic study into the feasibility of this new annealing technique, our aim was to clarify what is happening under the ideal conceptual condition of high-temperature millisecond annealing.