• DocumentCode
    3005238
  • Title

    GaAs/AlGaAs Five-Layer Asymmetric Coupled Quantum Well (FACQW) Mach-Zehnder Modulator

  • Author

    Arakawa, T. ; Takada, K. ; Tadano, F. ; Arima, T. ; Noh, J.-H. ; Tada, K.

  • Author_Institution
    Yokohama Nat. Univ., Yokohama
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Two types of Mach-Zehnder modulators with GaAs FACQWs were fabricated, and their static modulation characteristics were measured. A half-wave voltage and estimated |dn/dF| in the FACQW were 1.7 V and 3.3 x 10 5 cm/kV, respectively.
  • Keywords
    III-V semiconductors; Mach-Zehnder interferometers; gallium arsenide; optical fabrication; optical modulation; semiconductor quantum wells; GaAs-AlGaAs; Mach-Zehnder modulator; five-layer asymmetric coupled quantum well; voltage 1.7 V; Absorption; Chirp modulation; Electrodes; Erbium; Gallium arsenide; Intensity modulation; Molecular beam epitaxial growth; Optical modulation; Quantum well devices; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/CLEO.2007.4452613
  • Filename
    4452613
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3005238