Device technologies for high quality and smaller pixel in CCD and CMOS image sensors

Author

Abe, Hideshi

Author_Institution

Semicond. Solutions Network Co., Sony Corp., Kanagawa, Japan

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

989

Lastpage

992

Abstract

This paper reviews the trends in imaging device technologies of CCD and CMOS image sensors over the last few decades, and discusses the process and design architecture for CMOS image sensors with mega-pixels a few μm in size. These require a buried photodiode and a sharing transistor to gain saturation and sensitivity. An on-chip micro lens is useful, not only for raising the sensitivity but also suppressing the optical cross talk.

Keywords

CCD image sensors; CMOS image sensors; microlenses; photodiodes; transistors; CCD image sensors; CMOS image sensors; buried photodiode; imaging device technology; megapixel; on-chip micro lens; optical cross talk; sharing transistor; CMOS image sensors; CMOS technology; Charge coupled devices; Lenses; Optical imaging; Optical saturation; Optical sensors; Photodiodes; Pixel; Process design;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419354

Filename

1419354

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3005310