Performance Evaluation of Point-of-Load Chip-Scale DC-DC Power Converters Using Silicon Power MOSFETs and GaN Power HEMTs

Author

Shah, K. ; Shenai, K.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of Toledo, Toledo, OH, USA

fYear

2011

fDate

14-15 April 2011

Firstpage

1

Lastpage

5

Abstract

Performance evaluation of low-voltage silicon and GaN power FETs is presented for chip-scale DC-DC power converter applications. The circuit calculations are based on an improved circuit model for the FET with accurate description of terminal capacitances and on-resistance. It is shown that GaN power FETs combined with silicon MOS power diodes can potentially lead to nearly 82% power conversion efficiency at 25°C for a 12V/1V, 10W DC-DC converter when switched at 5 MHz in a synchronous buck converter topology.

Keywords

DC-DC power convertors; III-V semiconductors; elemental semiconductors; gallium compounds; high electron mobility transistors; power MOSFET; power semiconductor diodes; silicon; GaN; Si; circuit calculations; frequency 5 MHz; on-resistance; point-of-load chip-scale DC-DC power converters; power 10 W; power HEMT; power conversion efficiency; silicon MOS power diodes; silicon power MOSFET; synchronous buck converter topology; temperature 25 degC; Converters; Gallium nitride; Integrated circuit modeling; MOSFETs; Silicon; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Green Technologies Conference (IEEE-Green), 2011 IEEE

Conference_Location

Baton Rouge, LA

Print_ISBN

978-1-61284-713-9

Electronic_ISBN

978-1-61284-714-6

Type

conf

DOI

10.1109/GREEN.2011.5754851

Filename

5754851