MOSFETs and high-speed photodetectors on Ge-on-insulator substrates fabricated using rapid melt growth

Author

Liu, Yaocheng ; Gopalakrishnan, Kavitha ; Griffin, Peter B. ; Ma, Kai ; Deal, Michael D. ; Plummer, James D.

Author_Institution

Center for Integrated Syst., Stanford Univ., CA, USA

fYear

2004

fDate

13-15 Dec. 2004

Firstpage

1001

Lastpage

1004

Abstract

We have developed a novel rapid melt growth technique to produce Ge-on-insulator (GeOI) substrates with very high quality. P-channel MOSFETs, tri-gate MOS transistors and p-i-n photodetectors were fabricated with these GeOI structures. The entire process flow for these devices is fully compatible with base-line Si CMOS fabrication. The high E_Eff hole mobility of the pMOSFETs was estimated to be 120cm²/Vs, comparable to the reported results with bulk Ge wafers. The fabricated photodetectors showed high responsivity and very fast impulse response.

Keywords

MOSFET; elemental semiconductors; germanium; melt processing; p-i-n photodiodes; photodetectors; semiconductor-insulator boundaries; silicon; silicon-on-insulator; substrates; Ge; Ge-on-insulator substrate; GeOI; MOSFET; P channel; Si; Si CMOS fabrication; hole mobility; impulse response; p-i-n; pMOSFET; photodetectors; rapid melt growth fabrication; tri-gate MOS transistors; CMOS integrated circuits; CMOS process; Cooling; MOSFETs; Monolithic integrated circuits; Optical device fabrication; Optical films; Photodetectors; Semiconductor films; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International

Print_ISBN

0-7803-8684-1

Type

conf

DOI

10.1109/IEDM.2004.1419357

Filename

1419357