The Effects of Structural Parameters Alteration on Improvement of Current Gain and High Frequency Performance of a AlGaAs/GaAs SHBT

Author

Kaatuzian, Hassan ; Javadi, Elham ; Khatami, Saeid

Author_Institution

Dept. of Electr. Eng., Amirkabir Univ. of Technol. (Tehran Polytech.), Tehran, Iran

fYear

2012

fDate

21-23 May 2012

Firstpage

1

Lastpage

4

Abstract

In this paper the influence of structural parameters variations on the current gain and high frequency performance of a AlGaAs/GaAs HBT are investigated. Analytical equations are used to predict conventional microwave-photonic device structure for performance improvement. Through scaling of the length and width of the emitter and the thickness of the base, cutoff frequency and maximum oscillation frequency are improved from 26GHz to 29GHz and form 45GHz to 76GHz respectively. Also the DC current gain increases from 362 up to 579.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; high-frequency effects; semiconductor heterojunctions; AlGaAs-GaAs; AlGaAs-GaAs SHBT; DC current gain; analytical equations; current gain improvement; cutoff frequency; emitter length scaling; emitter width scaling; frequency 26 GHz to 29 GHz; frequency 45 GHz to 76 GHz; high frequency performance improvement; microwave-photonic device structure; oscillation frequency; structural parameter alteration effects; Cutoff frequency; Gallium arsenide; Heterojunction bipolar transistors; Oscillators; Performance evaluation; Resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics and Optoelectronics (SOPO), 2012 Symposium on

Conference_Location

Shanghai

ISSN

2156-8464

Print_ISBN

978-1-4577-0909-8

Type

conf

DOI

10.1109/SOPO.2012.6271068

Filename

6271068