• DocumentCode
    3005860
  • Title

    Simulation of Highly Efficient InGaN-Based LEDs with Hemispherical Patterned Sapphire Substrates

  • Author

    Lin, Zhiting ; Yang, Hui ; Li, Guoqiang

  • Author_Institution
    State Key Lab. of Luminescent Mater. & Devices, Southern China Univ. of Technol., Guangzhou, China
  • fYear
    2012
  • fDate
    21-23 May 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Simulation is used to study how the external quantum efficiency changes with the change in parameters of the unit hemisphere for GaN-based light emitting diodes (LEDs) fabricated on hemispherical patterned sapphire substrates. Through a series of experiments, we reveal the most effective pattern to improve the external quantum efficiency of LEDs on hemispherical patterned sapphire substrates. We also want to demonstrate a convenient way for pattern design and checking.
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; sapphire; wide band gap semiconductors; Al2O3; GaN-based light emitting diodes; InGaN; InGaN-based LED; external quantum efficiency; hemispherical patterned sapphire substrates; unit hemisphere; Geometry; Light emitting diodes; Refractive index; Substrates; Tiles;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics and Optoelectronics (SOPO), 2012 Symposium on
  • Conference_Location
    Shanghai
  • ISSN
    2156-8464
  • Print_ISBN
    978-1-4577-0909-8
  • Type

    conf

  • DOI
    10.1109/SOPO.2012.6271090
  • Filename
    6271090
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3005860