Temperature dependence of breakdown voltage in InAlAs/InGaAs HEMTs: theory and experiments

Author

Putnam, C.S. ; Somerville, M.H. ; del Alamo, J.A. ; Chao, P.C. ; Duh, K.G.

Author_Institution

MIT, Cambridge, MA, USA

fYear

1997

fDate

11-15 May 1997

Firstpage

197

Lastpage

200

Abstract

We present results of an experimental and theoretical study of the temperature dependence of the off-state breakdown voltage of InAlAs/InGaAs high electron mobility transistors (HEMTs). We find that the breakdown voltage (BV) has a negative temperature coefficient that is more prominent for lower values of the extrinsic sheet carrier concentration (n_s). Structural parameters such as the insulator thickness and top-to-bottom delta doping ratio have little effect on BV if n_s is held constant. These results are consistent with an extension of a new tunneling model for breakdown in HEMTs to include thermionic-field emission

Keywords

III-V semiconductors; aluminium compounds; carrier density; doping profiles; electric breakdown; electron field emission; gallium arsenide; high electron mobility transistors; indium compounds; semiconductor device models; semiconductor device reliability; semiconductor doping; thermionic electron emission; HEMTs; III-V semiconductors; InAlAs-InGaAs; extrinsic sheet carrier concentration; insulator thickness; negative temperature coefficient; off-state breakdown voltage; thermionic-field emission; top-to-bottom delta doping ratio; tunneling model; Doping; HEMTs; Indium compounds; Indium gallium arsenide; Insulation; MODFETs; Semiconductor process modeling; Structural engineering; Temperature dependence; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600091

Filename

600091