Fluorine limited reliability of AlInAs/InGaAs high electron mobility transistors with molybdenum gates

Author

Ishida, T. ; Yamamoto, Y. ; Hayafuji, N. ; Miyakuni, S. ; Hattori, R. ; Ishikawa, T. ; Mitsui, Y.

Author_Institution

Optoelectr. & Microwave Devices Lab., Mitsubishi Electr. Corp., Itami, Japan

fYear

1997

fDate

11-15 May 1997

Firstpage

201

Lastpage

204

Abstract

A highly reliable AlInAs/InGaAs high electron mobility transistor with the projected lifetime of 10⁶ hours at 125°C is developed. The gate electrode sinking is eliminated by adopting molybdenum gate contact metal, and the carrier passivation is controlled by eliminating the extrinsic fluorine containing processes. The experimental results and theoretical calculation indicate the present reliability is limited by the intrinsic fluorine contamination from the air

Keywords

III-V semiconductors; aluminium compounds; fluorine; gallium arsenide; high electron mobility transistors; indium compounds; life testing; molybdenum; passivation; semiconductor device metallisation; semiconductor device reliability; semiconductor device testing; 125 degC; 170 to 240 C; 1E6 h; F; III-V semiconductors; Mo-AlInAs-InGaAs; carrier passivation; degradation mechanisms; gate contact metal; high electron mobility transistor; intrinsic contamination; reliability; Contamination; Degradation; Electrodes; Failure analysis; HEMTs; Indium gallium arsenide; Life estimation; Life testing; MODFETs; Microwave transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600093

Filename

600093