• DocumentCode
    3006367
  • Title

    Flat-Gain Single-Stage Amplifier Using High Concentration Erbium Doped Fibers in Single-Pass and Double-Pass Configurations

  • Author

    Hamida, B.A. ; Latiff, A.A. ; Cheng, X.S. ; Ismail, M.A. ; Naji, W. ; Khan, S. ; AL-Khateeb, W. ; Ahmed, Hameeza ; Harun, S.W.

  • Author_Institution
    Electr. & Comput. Eng. Dept., Int. Islamic Univ. Malaysia (IIUM), Gombak, Malaysia
  • fYear
    2012
  • fDate
    21-23 May 2012
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    A flat gain Erbium-doped fiber amplifier (EDFA) is demonstrated using a gain media of high concentration Silica-based erbium doped fiber (EDF). The amplifier has one stage comprising a 1.5 m and 9 m long EDF optimized for C-band and L-band operations respectively, in a single-pass and double-pass configuration. The CFBG is used at the end of EDF to allow a double propagation of signal and thus increases the attainable gain in both C- and L-band spectra. At input signal power of -30 dB, the averaged flat gain of approximately 25 dB over C-band region and the averaged flat gain of approximately 30 dB over L-band region are achieved by the double-pass amplifier with gain variation approximately ±3 dB. The corresponding noise figure is maintained at 5 dB with noise figure variation ±0.5 dB.
  • Keywords
    erbium; laser noise; optical fibre amplifiers; silicon compounds; C-band operations; C-band spectra; CFBG; EDFA; L-band operations; L-band spectra; SiO2:Er; attainable gain; averaged flat gain; double signal propagation; double-pass amplifier; double-pass configurations; flat gain single-stage erbium-doped fiber amplifier; gain media; gain variation; high concentration silica-based erbium doped fibers; input signal power; noise figure variation; single-pass configurations; size 1.5 m; size 9 m; Erbium-doped fiber amplifier; Fiber gratings; Gain; L-band; Noise figure; Optical fiber amplifiers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photonics and Optoelectronics (SOPO), 2012 Symposium on
  • Conference_Location
    Shanghai
  • ISSN
    2156-8464
  • Print_ISBN
    978-1-4577-0909-8
  • Type

    conf

  • DOI
    10.1109/SOPO.2012.6271113
  • Filename
    6271113