Fabrication and Characterization of Si/GaInP Heterojunction Photodetectors

Author

Kim, Munho ; Seo, Jung-Hun ; Yang, Hongjun ; Shi, Jian ; Mawst, Luke ; Zhou, Weidong ; Wang, Xudong ; Ma, Zhenqiang

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Wisconsin-Madison, Madison, WI, USA

fYear

2012

fDate

21-23 May 2012

Firstpage

1

Lastpage

3

Abstract

This paper presents the fabrication of the Si/GaInP heterojunction photodetectors using transfer printing of silicon nanomembranes (SiNMs). Doped SiNM was transferred to a GaInP/GaAs substrate using a polydimethylsiloxane (PDMS) stamp. An adhesion interfacial layer was used to bond the two materials together. The heterogeneous integration of Si, GaInP, and GaAs layers formed a P-I-N structure for photo detection. Very low dark current of 0.82 nA was measured under a reverse bias of 3 V. A photo current to dark current ratio of 7.5 × 10³ was measured. This result shows high potential of heterojunction photodetectors based on the transfer printing method.

Keywords

adhesion; bonding processes; electric current measurement; elemental semiconductors; gallium compounds; membranes; nanofabrication; p-i-n photodiodes; photodetectors; polymers; printing; silicon; GaInP-GaAs; P-I-N photodiode structure; PDMS stamp; Si-GaInP; SiNM; adhesion interfacial layer; bonding process; current 0.82 nA; dark current ratio measurement; heterojunction photodetector; photocurrent; polydimethylsiloxane stamp; silicon nanomembrane; transfer printing method; voltage 3 V; Current measurement; Gallium arsenide; Photodetectors; Printing; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics and Optoelectronics (SOPO), 2012 Symposium on

Conference_Location

Shanghai

ISSN

2156-8464

Print_ISBN

978-1-4577-0909-8

Type

conf

DOI

10.1109/SOPO.2012.6271117

Filename

6271117