DocumentCode
3006466
Title
Room Temperature Photoluminescence from Ge/SiGe Quantum Well Structure in Microdisk Resonator
Author
Chen, Xiaochi ; Huo, Yijie ; Fei, Edward T. ; Shambat, Gary ; Liu, Xi ; Kamins, Theodore I. ; Vuckovic, Jelena ; Harris, James S.
Author_Institution
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
fYear
2012
fDate
21-23 May 2012
Firstpage
1
Lastpage
3
Abstract
In this paper, we report the enhanced direct band gap photoluminescence from carrier confinement in Ge quantum wells with SiGe barriers at room temperature. We have also fabricated a microdisk resonator and present the tapered-fiber coupled high-Q cavity mode from Ge quantum wells.
Keywords
Ge-Si alloys; germanium; optical resonators; photoluminescence; semiconductor quantum wells; Ge quantum wells; Ge-SiGe; Ge-SiGe quantum well structure; Si; SiGe barriers; carrier confinement; direct band gap photoluminescence enhancement; microdisk resonator; tapered-fiber coupled high-Q cavity mode; temperature 293 K to 298 K; Optical resonators; Photoluminescence; Photonic band gap; Photonics; Silicon; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics and Optoelectronics (SOPO), 2012 Symposium on
Conference_Location
Shanghai
ISSN
2156-8464
Print_ISBN
978-1-4577-0909-8
Type
conf
DOI
10.1109/SOPO.2012.6271119
Filename
6271119
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