DocumentCode
3006508
Title
Ultraviolet Lasing Characteristics of a GaN Photonic Crystal Defect Emitter
Author
Lai, Chun-Feng ; Yu, Peichen ; Wang, Te-Chung ; Kuo, Hao-Chung ; Lu, Tien-Chang ; Wang, Shing-Chung ; Lee, Chao-Kuei
Author_Institution
Nat. Chiao-Tung Univ., Hsinchu
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
The fabricated GaN photonic crystal defect emitter demonstrated multimode lasing with a low optical pumping threshold of pulse energy ~0.15muJ. The device exhibited high spectral purity and enhanced spontaneous emission factor, beta~0.045.
Keywords
III-V semiconductors; gallium compounds; optical pumping; photonic crystals; spontaneous emission; surface emitting lasers; wide band gap semiconductors; GaN-Si; energy 0.15 muJ; enhanced spontaneous emission; multimode lasing; optical pumping; photonic crystal defect emitter; spectral purity; ultraviolet lasing characteristics; Gallium nitride; Hydrogen; Laser beams; Laser excitation; Optical pulses; Optical pumping; Photonic crystals; Pump lasers; Spontaneous emission; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/CLEO.2007.4452684
Filename
4452684
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