DocumentCode
3006516
Title
Room-Temperature InAs/InP Quantum-Dot Photonic Crystal Microlasers Using Cavity-Confined Slow Light
Author
Bordas, F. ; Seassal, C. ; Dupuy, E. ; Regreny, P. ; Gendry, M. ; Steel, M.J. ; Rahmani, A.
Author_Institution
EcoleCentralede Lyon, Ecully
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
We achieved room temperature laser operation, around 1.5 mum, with a single layer of InAs/InP quantum dots in a photonic crystal structure using confined slow light. The lasing threshold is a few hundred muW.
Keywords
III-V semiconductors; indium compounds; photonic crystals; quantum dot lasers; semiconductor quantum dots; InAs-InP; cavity-confined slow light; photonic crystal structure; room temperature laser operation; room-temperature InAs/InP quantum-dot photonic crystal microlasers; temperature 293 K to 298 K; Indium phosphide; Laser modes; Optical pumping; Photonic crystals; Quantum dot lasers; Quantum dots; Resonance; Semiconductor lasers; Slow light; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/CLEO.2007.4452685
Filename
4452685
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