Dynamic Range Extension of a CMOS Active Pixel Sensor with Gate/Body-Tied PMOSFET-Type Photodetectors Using a Feedback Structure

Author

Bae, Myunghan ; Jo, Sung-Hyun ; Shin, Jang-Kyoo ; Choi, Pyung ; Seo, Sang-Ho

Author_Institution

Sch. of Electron. Eng., Kyungpook Nat. Univ., Daegu, South Korea

fYear

2012

fDate

21-23 May 2012

Firstpage

1

Lastpage

4

Abstract

In this paper, a dynamic range extension technique is proposed based on 3-transistor active pixel sensor (APS) with gate/body-tied p-channel metal oxide semiconductor field effect transistor (PMOSFET)-type photodetector using a feedback structure. The proposed APS and conventional APS have been designed and fabricated by using 0.35 μm 2-poly 4-metal standard complementary metal oxide semiconductor (CMOS) process and their characteristics have been measured.

Keywords

CMOS image sensors; MOS integrated circuits; MOSFET; photodetectors; 2-poly 4-metal standard complementary metal oxide semiconductor process; 3-transistor active pixel sensor; APS; CMOS active pixel sensor; CMOS process; dynamic range extension technique; feedback structure; gate-body-tied PMOSFET-type photodetectors; gate-body-tied p-channel metal oxide semiconductor field effect transistor; size 0.35 mum; Dynamic range; Logic gates; MOSFET circuits; Photoconductivity; Photodetectors; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics and Optoelectronics (SOPO), 2012 Symposium on

Conference_Location

Shanghai

ISSN

2156-8464

Print_ISBN

978-1-4577-0909-8

Type

conf

DOI

10.1109/SOPO.2012.6271130

Filename

6271130