Title :
Growth and Material Properties of ZnTe/GaSb Heterostructures for Optoelectronic Device Applications
Author :
Liu, Xinyu ; Furdyna, Jacek K. ; Fan, Jin ; Ouyang, Lu ; Smith, David J. ; Ding, Ding ; Zhang, Yong-Hang
Author_Institution :
Dept. of Phys., Univ. of Notre Dame, Notre Dame, IN, USA
Abstract :
This paper reports the growth of ZnTe/GaSbheterostructures on GaSb (001) substrates using molecular beam epitaxy (MBE). X-ray diffraction (XRD) and high-resolution electron microscopy (HREM) are used to characterize the structural properties. Ellipsometryand photoluminescence (PL) are used to characterize the optical properties.
Keywords :
X-ray diffraction; electron microscopy; ellipsometry; gallium compounds; molecular beam epitaxial growth; monolithic integrated circuits; optoelectronic devices; photoluminescence; zinc compounds; GaSb (001) substrates; HREM; X-ray diffraction; ZnTe-GaSb; ZnTe-GaSb heterostructure growth; ellipsometry; high-resolution electron microscopy; material properties; molecular beam epitaxy; optoelectronic device applications; photoluminescence; structural properties; Lattices; Molecular beam epitaxial growth; Optical imaging; Substrates; Temperature measurement; X-ray scattering;
Conference_Titel :
Photonics and Optoelectronics (SOPO), 2012 Symposium on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4577-0909-8
DOI :
10.1109/SOPO.2012.6271134
