A 3.5 GHz packaged medium power amplifier using GaAs PHEMT

Author

Rasmi, Amiza ; Azmi, I.M. ; Rose, M. Rafie Che ; Marzuki, Arjuna

Author_Institution

TM R&D Sdn Bhd, Cyberjaya, Malaysia

fYear

2011

fDate

21-24 Nov. 2011

Firstpage

622

Lastpage

625

Abstract

This paper describes the design and measured performance of monolithic microwave integrated circuit (MMIC) medium power amplifier for WiMAX applications in the 3.5 GHz band. The medium power amplifier (MPA) was designed using 0.15μm GaAs power PHEMT technology. The die size of this MPA is 1.2mm × 0.7mm and this MPA also offered in 16-pin QF1 packaged. With only a 3.0 V of drain voltage (V_DS), a packaged MPA exhibits the output power at 1dB gain compression (P1dB) of 17.24 dBm, power-added efficiency (PAE) of 24.12% and gain of 5.74 dB, respectively. The maximum current, Imax of this amplifier is 80mA and the power consumption for the device is 240mW.

Keywords

III-V semiconductors; MMIC power amplifiers; WiMax; gallium arsenide; power HEMT; 16-pin QFN package; GaAs; GaAs power PHEMT technology; MPA die size; WiMAX application; drain voltage; frequency 3.5 GHz; gain compression; medium power amplifier; monolithic microwave integrated circuit medium power amplifier; packaged MPA; power consumption; power-added efficiency; size 0.15 mum; voltage 3 V; Gain; Gallium arsenide; Impedance matching; PHEMTs; Power amplifiers; Power generation; 3.5 GHz; GaAs PHEMT; WiMAX Applications; medium power amplifier; packaged;

fLanguage

English

Publisher

ieee

Conference_Titel

TENCON 2011 - 2011 IEEE Region 10 Conference

Conference_Location

Bali

ISSN

2159-3442

Print_ISBN

978-1-4577-0256-3

Type

conf

DOI

10.1109/TENCON.2011.6129181

Filename

6129181