Electronic Transport Properties in Top-Gated Epitaxial Graphene on Silicon Carbide with ALD Al2O3 High-K Dielectric

Author

Neal, Adam T. ; Gu, Jiangjiang ; Bolen, Mike ; Shen, Tian ; Capano, Mike ; Engle, Lloyd ; Ye, Peide D.

Author_Institution

Electr. & Comput. Eng. & Birck Nanotechnol. Center, Purdue Univ., West Lafayette, IN, USA

fYear

2010

fDate

June 28 2010-July 1 2010

Firstpage

1

Lastpage

3

Abstract

Graphene Hall-bar devices, with aluminum oxide (Al₂O₃) high-k top gate, have been manufactured from epitaxial graphene grown in an Epigress VP508 hot-wall chemical vapor deposition reactor. Fully oxidized Al and Ti seeding layers were used for ALD growth of the Al₂O₃ gate dielectric. Carrier mobilities and densities were measured at temperatures ranging from 1K to 80K. Carrier mobility and density was also characterized for one device from 1K up to room temperature.

Keywords

carrier density; carrier mobility; chemical vapour deposition; epitaxial layers; graphene; pyrolysis; ALD; Al₂O₃-SiC; C; carrier density; carrier mobility; electronic transport properties; gate dielectric; graphene Hall-bar devices; high-k dielectric; hot-wall chemical vapor deposition reactor; temperature 1 K to 298 K; top-gated epitaxial graphene; Aluminum oxide; Chemical vapor deposition; Density measurement; Dielectric measurements; High K dielectric materials; High-K gate dielectrics; Inductors; Manufacturing; Silicon carbide; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nano Symposium (UGIM), 2010 18th Biennial University/Government/Industry

Conference_Location

West Lafayette, IN

ISSN

0749-6877

Print_ISBN

978-1-4244-4731-2

Electronic_ISBN

0749-6877

Type

conf

DOI

10.1109/UGIM.2010.5508904

Filename

5508904