Title :
Electronic Transport Properties in Top-Gated Epitaxial Graphene on Silicon Carbide with ALD Al2O3 High-K Dielectric
Author :
Neal, Adam T. ; Gu, Jiangjiang ; Bolen, Mike ; Shen, Tian ; Capano, Mike ; Engle, Lloyd ; Ye, Peide D.
Author_Institution :
Electr. & Comput. Eng. & Birck Nanotechnol. Center, Purdue Univ., West Lafayette, IN, USA
fDate :
June 28 2010-July 1 2010
Abstract :
Graphene Hall-bar devices, with aluminum oxide (Al2O3) high-k top gate, have been manufactured from epitaxial graphene grown in an Epigress VP508 hot-wall chemical vapor deposition reactor. Fully oxidized Al and Ti seeding layers were used for ALD growth of the Al2O3 gate dielectric. Carrier mobilities and densities were measured at temperatures ranging from 1K to 80K. Carrier mobility and density was also characterized for one device from 1K up to room temperature.
Keywords :
carrier density; carrier mobility; chemical vapour deposition; epitaxial layers; graphene; pyrolysis; ALD; Al2O3-SiC; C; carrier density; carrier mobility; electronic transport properties; gate dielectric; graphene Hall-bar devices; high-k dielectric; hot-wall chemical vapor deposition reactor; temperature 1 K to 298 K; top-gated epitaxial graphene; Aluminum oxide; Chemical vapor deposition; Density measurement; Dielectric measurements; High K dielectric materials; High-K gate dielectrics; Inductors; Manufacturing; Silicon carbide; Temperature measurement;
Conference_Titel :
Micro/Nano Symposium (UGIM), 2010 18th Biennial University/Government/Industry
Conference_Location :
West Lafayette, IN
Print_ISBN :
978-1-4244-4731-2
Electronic_ISBN :
0749-6877
DOI :
10.1109/UGIM.2010.5508904
