Title :
Low power, low group delay MB-OFDM UWB CMOS power amplifier using current-reused technique
Author :
Sapawi, R. ; Pokharel, R.K. ; Murad, S.A.Z. ; Mat, D.A.A. ; Kanaya, H. ; Yoshida, K.
Author_Institution :
Grad. Sch. of ISEE, Kyushu Univ., Fukuoka, Japan
Abstract :
This paper presents a low power and low group delay for multiband orthogonal frequency division multiplexing (MB-OFDM) ultra wideband (UWB) power amplifier (PA) for 3.1-7.5 GHz is proposed. The proposed PA employs a common gate with current-reused structure to provide wideband input matching, low group delay and low power consumption. The simulation results shows that the proposed PA design has an average gain of 11.4 dB with flatness of ±0.8 dB, while maintaining bandwidth of 2.6 to 8.3 GHz. An input return loss (S11) less than -11.1 dB and output return loss (S22) less than -10.5 dB, respectively are obtained. The PA design achieves the phase linearity (i.e. group delay) of ±67.1 ps and only consuming 14.5 mW power from 1.2 V supply voltage. A good output 1-dB compression point OP1dB of 0.5 dBm is obtained.
Keywords :
CMOS integrated circuits; OFDM modulation; power amplifiers; power consumption; ultra wideband technology; MB-OFDM UWB CMOS; current-reused technique; low group delay; multiband orthogonal frequency division multiplexing; power amplifier; power consumption; CMOS integrated circuits; Delay; Gain; OFDM; Power amplifiers; Wideband; common gate configuration; current-reused; group delay; low power; power amplifier; ultra-wideband (UWB);
Conference_Titel :
TENCON 2011 - 2011 IEEE Region 10 Conference
Conference_Location :
Bali
Print_ISBN :
978-1-4577-0256-3
DOI :
10.1109/TENCON.2011.6129218