• DocumentCode
    3007777
  • Title

    Photoluminescence of GaInAsP/InP Single Quantum Wires With Lateral Widths Down To 6 nm Fabricated by Dry Etching and Regrowth

  • Author

    Itoh, Hayato ; Yoshita, Masahiro ; Akiyama, Hidenori

  • Author_Institution
    Univ. of Tokyo, Chiba
  • fYear
    2007
  • fDate
    6-11 May 2007
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    We measured photoluminescence of GalnAsP/InP single quantum wires with lateral widths down to 6 nm fabricated by dry etching and regrowth. Lateral quantum confinement energies up to 90 meV were systematically observed.
  • Keywords
    III-V semiconductors; arsenic compounds; etching; gallium compounds; indium compounds; photoluminescence; semiconductor quantum wires; GaInAsP-InP; dry etching; lateral quantum confinement energies; photoluminescence; regrowth; single quantum wires; Dry etching; Indium phosphide; Photoluminescence; Potential well; Rough surfaces; Size measurement; Solid state circuits; Surface roughness; Wet etching; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-55752-834-6
  • Type

    conf

  • DOI
    10.1109/CLEO.2007.4452751
  • Filename
    4452751
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3007777