Intersubband Transitions in Lattice-Matched AlInN/GaN Heterostructures

Author

Malis, Oana ; Edmunds, Colin ; Li, Donghui ; Manfra, Michael J.

Author_Institution

Dept. of Phys., Purdue Univ., West Lafayette, IN, USA

fYear

2010

fDate

June 28 2010-July 1 2010

Firstpage

1

Lastpage

4

Abstract

Intersubband transitions in lattice-matched AlInN/GaN heterostructures grown by molecular-beam epitaxy were studied with infrared absorption, photocurrent and resonant tunneling measurements. Strong near-infrared absorption was observed at room temperature in the technologically relevant 2.1-2.9 μm. The results show the potential of lattice-matched nitrides for near- and far-infrared intersubband devices such as lasers and detectors.

Keywords

III-V semiconductors; aluminium compounds; indium compounds; infrared spectra; molecular beam epitaxial growth; photoconductivity; photoemission; resonant tunnelling; semiconductor growth; semiconductor heterojunctions; wide band gap semiconductors; AlInN-GaN; far-infrared intersubband devices; infrared absorption; intersubband transitions; lattice-matched heterostructure; lattice-matched nitrides; molecular-beam epitaxy; near-infrared absorption; near-infrared intersubband devices; photocurrent; resonant tunneling; temperature 293 K to 298 K; Electromagnetic wave absorption; Gallium nitride; Infrared detectors; Infrared spectra; Molecular beam epitaxial growth; Optical materials; Optical scattering; Phonons; Quantum cascade lasers; Semiconductor materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro/Nano Symposium (UGIM), 2010 18th Biennial University/Government/Industry

Conference_Location

West Lafayette, IN

ISSN

0749-6877

Print_ISBN

978-1-4244-4731-2

Electronic_ISBN

0749-6877

Type

conf

DOI

10.1109/UGIM.2010.5508938

Filename

5508938