The effects of InAlAs strained-superlattice barriers upon the properties of InGaAlAs/InP quantum wells and double heterostructures

Author

Dupuis, R.D. ; Chelakara, R.V. ; Tinkham, B.P.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

fYear

1997

fDate

11-15 May 1997

Firstpage

220

Lastpage

221

Abstract

In this paper, we investigate the growth of lattice-matched and strained InGaAlAs/InP heterostructures by metalorganic chemical vapor deposition (MOCVD) and the design and characterization of strained-superlattice barriers (SSLB´s) to enhance the electron confinement in the InGaAlAs/InP system and study the effect of such barriers on the PL emission from InGaAlAs active regions, as well as to study the effect on devices

Keywords

III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum wells; semiconductor superlattices; InAlAs; InAlAs strained-superlattice barrier; InGaAlAs-InP; InGaAlAs/InP quantum well; double heterostructure; electron confinement; lattice-matched growth; metalorganic chemical vapor deposition; photoluminescence emission; Carrier confinement; DH-HEMTs; Indium compounds; Indium phosphide; Inductors; Luminescence; MOCVD; Optical materials; Temperature; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600101

Filename

600101