DocumentCode
3008120
Title
Generation of terahertz radiation from a new InGaP/InGaAs/GaAs Double Grating Gate HEMT Device
Author
Meziani, Y.M. ; Hanabe, M. ; Koizumi, A. ; Ishibashi, T. ; Uno, T. ; Otsuji, T. ; Sano, E.
Author_Institution
Tohoku Univ., Sendai
fYear
2007
fDate
6-11 May 2007
Firstpage
1
Lastpage
2
Abstract
We observed a generation of terahertz radiation from different grating gate devices. The devices are subjected to the CW laser and then to the impulsive laser at room temperature.
Keywords
III-V semiconductors; diffraction gratings; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; infrared sources; integrated optics; laser beam applications; microwave photonics; quantum well devices; submillimetre wave generation; HEMT device; InGaP-InGaAs-GaAs; continuous-wave laser; double grating gate device; impulsive laser; quantum well device; room temperature excitation; temperature 293 K to 298 K; terahertz generation; terahertz radiation; Bolometers; Gallium arsenide; Gratings; HEMTs; Indium gallium arsenide; Laser excitation; Plasma temperature; Plasmons; Radiation detectors; Surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2007. CLEO 2007. Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-55752-834-6
Type
conf
DOI
10.1109/CLEO.2007.4452774
Filename
4452774
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