Investigation of parallel connection of IGBTs

Author

Yang, Hua ; Xuhui, Wen ; Lingyun, Gu ; Li, Wang ; Feng, Zhao

Author_Institution

Lab. of Electr. Vehicles, Chinese Acad. of Sci., Beijing, China

Volume

1

fYear

2005

fDate

27-29 Sept. 2005

Firstpage

833

Abstract

IGBT device has the advantages of high current, simple gate drive, high-frequency performance and etc; therefore it gains widely application in the drive system of electrical vehicles. However, the current carrying capacity, cost and reliability limit its further application in the higher power level, such as 160 KW and further. One of the key technologies to overcome such limitation is the parallel connection of IGBT devices. This paper investigated the effects of some issues such as topological structure, gate drive resistance, snubber circuit and so on. The effects are verified by experiments and some important conclusions are presented.

Keywords

electric vehicles; insulated gate bipolar transistors; snubbers; 160 kW; IGBT device; electrical vehicles; gate drive resistance; parallel connection; snubber circuit; topological structure; Circuit testing; Costs; Electric vehicles; Insulated gate bipolar transistors; Performance gain; Power electronics; Power system reliability; Snubbers; Vehicle driving; Voltage; IGBT; current balance; electrical vehicles; parallel connection; topological structure;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Machines and Systems, 2005. ICEMS 2005. Proceedings of the Eighth International Conference on

Print_ISBN

7-5062-7407-8

Type

conf

DOI

10.1109/ICEMS.2005.202654

Filename

1574887