DocumentCode
3008648
Title
Dynamic power supply current monitoring of SRAMs
Author
Su, Shyang-Tai ; Makki, Rafic Z. ; Nagle, H. Troy ; Liu, Jian
Author_Institution
Hewlett-Packard Co., Fort Collins, CO, USA
fYear
1994
fDate
19-23 Sep 1994
Firstpage
370
Lastpage
373
Abstract
In this paper, we report the results of a physical experiment aimed at assessing a new test method for CMOS SRAMs. The test method involves a new and simple philosophy for testing: monitor the switching behavior of a circuit rather than just the output logic state. Observing the dynamic (transient) power supply current can lead to drastic improvement in “real” defect coverage. We use the dynamic power supply current as indicative of such switching
Keywords
CMOS memory circuits; SRAM chips; electric current; integrated circuit testing; CMOS; SRAMs; defect coverage; dynamic power supply current; power supply current monitoring; switching behavior; test method; Circuit faults; Circuit testing; Current supplies; Electrical fault detection; Logic testing; Monitoring; Power supplies; Random access memory; Switches; Switching circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC Conference and Exhibit, 1994. Proceedings., Seventh Annual IEEE International
Conference_Location
Rochester, NY
Print_ISBN
0-7803-2020-4
Type
conf
DOI
10.1109/ASIC.1994.404538
Filename
404538
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