Title :
Dynamic power supply current monitoring of SRAMs
Author :
Su, Shyang-Tai ; Makki, Rafic Z. ; Nagle, H. Troy ; Liu, Jian
Author_Institution :
Hewlett-Packard Co., Fort Collins, CO, USA
Abstract :
In this paper, we report the results of a physical experiment aimed at assessing a new test method for CMOS SRAMs. The test method involves a new and simple philosophy for testing: monitor the switching behavior of a circuit rather than just the output logic state. Observing the dynamic (transient) power supply current can lead to drastic improvement in “real” defect coverage. We use the dynamic power supply current as indicative of such switching
Keywords :
CMOS memory circuits; SRAM chips; electric current; integrated circuit testing; CMOS; SRAMs; defect coverage; dynamic power supply current; power supply current monitoring; switching behavior; test method; Circuit faults; Circuit testing; Current supplies; Electrical fault detection; Logic testing; Monitoring; Power supplies; Random access memory; Switches; Switching circuits;
Conference_Titel :
ASIC Conference and Exhibit, 1994. Proceedings., Seventh Annual IEEE International
Conference_Location :
Rochester, NY
Print_ISBN :
0-7803-2020-4
DOI :
10.1109/ASIC.1994.404538
