A comprehensive analytical approach for the evaluation of the P,R and C noise coefficients of InAlAs/InGaAs DG-HEMT

Author

Bhattacharya, Monika ; Jogi, Jyotika ; Gupta, R.S. ; Gupta, Mridula

Author_Institution

Dept. of Electron. Sci., Univ. of Delhi, New Delhi, India

fYear

2011

fDate

21-24 Nov. 2011

Firstpage

1131

Lastpage

1134

Abstract

The paper presents a comprehensive and accurate charge control based approach for the evaluation of the mean square gate and drain noise current and the P, R & C noise coefficients of a symmetric tied-gate InAlAs/InGaAs DG-HEMT which play a vital role in the determination of the various other important noise performance parameters including the noise conductance and the minimum noise figure. The effect of gate length on the gate voltage behaviour of the P, R & C noise coefficients is studied. The analytical results obtained are compared and are found to correspond well with the ATLAS device simulation results.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; ATLAS device simulation; C noise coefficient; InAlAs-InGaAs; P noise coefficient; R noise coefficient; charge control based approach; drain noise current; gate length; mean square gate; noise conductance; noise figure; symmetric tied-gate DG-HEMT; HEMT; InAlAs/InGaAs; correlation coefficient; double-gate; drain noise; gate noise;

fLanguage

English

Publisher

ieee

Conference_Titel

TENCON 2011 - 2011 IEEE Region 10 Conference

Conference_Location

Bali

ISSN

2159-3442

Print_ISBN

978-1-4577-0256-3

Type

conf

DOI

10.1109/TENCON.2011.6129288

Filename

6129288