Title :
EKV model extraction for PD SOI MOSFET
Author :
Zhu, Xunyu ; Hutchens, Chris
Author_Institution :
Oklahoma State Univ., Stillwater, OK, USA
Abstract :
EKV model parameters are extracted from the partially depleted (PD) SOI MOSFET fabricated in 0.5 μm Peregrine process. The simulated I-V curves match the measured data very well.
Keywords :
MOSFET; inversion layers; semiconductor device models; silicon-on-insulator; EKV model parameters extraction; Peregrine process; first order effects; intrinsic model parameters; inversion regions; partially depleted SOI MOSFET; second order effects; simulated I-V curves; CMOS technology; Circuit testing; Data mining; Equations; MOSFET circuits; Microelectronics; Parameter extraction; Semiconductor device modeling; Virtual colonoscopy; Voltage;
Conference_Titel :
Region 5 Conference: Annual Technical and Leadership Workshop, 2004
Print_ISBN :
0-7803-8217-X
DOI :
10.1109/REG5.2004.1300166
