Closed-Loop Gate Drive for High Power IGBTs

To overcome the drawbacks of the conventional gate drive, in this paper a closed-loop gate control method is proposed. In this novel method, the switching speed, specifically di/dt, is measured from the voltage across the parasitic inductance of the IGBT module and a closed-loop control is employed to adaptively adjust the gate drive voltage to control the switching speed according to a preset control reference. As a result, both the voltage overshoot and current overshoot can be effectively controlled. This new gate drive method enables programmable control of switching speed and allows full use of the capability of the power devices. The oscillations during IGBT switching are also reduced and associated EMI problems can be mitigated. The relationships between the controlled voltage overshoot, current overshoot and associated energy losses are derived and can provide guidelines for practical design. Also, the proposed gate drive fully utilizes gate drive signal information of amplitude and duty cycle, and provides a new capability for the system modulator to effectively control both the power electronic circuit´s steady-state and transient behaviors simultaneously.