A novel sense amplifier for flexible voltage operation NAND flash memories

Author

Nakamura, Hiroshi ; Miyamoto, Junichi ; Imamiya, Kenichi ; Iwata, Yoshihisa

Author_Institution

ULSI Res. Labs., Toshiba Corp., Kawasaki, Japan

fYear

1995

fDate

8-10 June 1995

Firstpage

71

Lastpage

72

Abstract

This paper proposes a new bit-by-bit verify circuit for application in NAND flash memories. The Sense Amplifier (S/A) employed confers two benefits: flexible power supply voltage (ex. 3 V or 5 V) operation with a high noise immunity and an intelligent page copy function. The benefits are very useful to the flash memory card or system and accelerate the replacement of magnetic memories by flash memories. The S/A has been successfully implemented in the commercial version of the 32 Mbit NAND-EEPROM, in which the S/A is newly introduced in comparison with the prototype version.

Keywords

EPROM; NAND circuits; amplifiers; integrated memory circuits; 3 V; 32 Mbit; 5 V; EEPROM; NAND flash memories; bit-by-bit verify circuit; flexible voltage operation; intelligent page copy function; noise immunity; sense amplifier; Acceleration; Circuit noise; Flash memory; High power amplifiers; Magnetic memory; Magnetic noise; Operational amplifiers; Power supplies; Prototypes; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Circuits, 1995. Digest of Technical Papers., 1995 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

0-7800-2599-0

Type

conf

DOI

10.1109/VLSIC.1995.520690

Filename

520690