Monolithic 60 GHz GaAs CW IMPATT oscillator

Author

Bayraktaroglu, B.

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

fYear

1988

fDate

24-25 May 1988

Firstpage

63

Lastpage

66

Abstract

A monolithic microwave integrated circuit (MMIC) design was developed for GaAs IMPATT diodes to enable their operation under continuous-wave (CW) conditions at V-band frequencies. All impedance-matching circuits were fabricated on the top surface of the GaAs substrate. At 61.5 GHz, 100-mW CW output power was obtained with 13.5% conversion efficiency. In an alternative design, varactor diodes were integrated with the IMPATT circuits to produce the first monolithic VCOs operating under CW conditions. Over 3.5 GHz of tuning bandwidth was obtained at a center frequency of 70-GHz with a CW output power of 15 mW.<>

Keywords

III-V semiconductors; IMPATT diodes; gallium arsenide; microwave integrated circuits; microwave oscillators; monolithic integrated circuits; variable-frequency oscillators; 100 mW; 13.5 percent; 15 mW; 3.5 GHz; 60 GHz; 70 GHz; CW output power; GaAs; GaAs substrate; MMIC CW IMPATT oscillator; V-band frequencies; center frequency; conversion efficiency; impedance-matching circuits; monolithic VCOs; tuning bandwidth; varactor diodes; Diodes; Frequency; Gallium arsenide; MMICs; Microwave integrated circuits; Microwave oscillators; Monolithic integrated circuits; Power generation; Surface impedance; Varactors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1988. Digest of Papers., IEEE 1988

Conference_Location

New York, NY, USA

Type

conf

DOI

10.1109/MCS.1988.197290

Filename

197290