• DocumentCode
    3009634
  • Title

    Broadband monolithic single and double ring active/passive mixers

  • Author

    Pavio, A.M. ; Halladay, R.H. ; Bingham, S.D. ; Sapashe, C.A.

  • Author_Institution
    Texas Instrum. Inc., Dallas, TX, USA
  • fYear
    1988
  • fDate
    24-25 May 1988
  • Firstpage
    71
  • Lastpage
    74
  • Abstract
    Several double balanced multi-octave bandwidth mixers, comprised of active center-tapped baluns and diode rings are discussed that were fabricated using planar monolithic circuit technology. This novel balun topology uses common gate and common source circuit techniques, so that an ideal 180 degrees phase shift occurs for the signals present between the upper and lower halves of the circuit. The balun exhibits excellent balance through the design band on 2-18 GHz. The performance of a center-tapped balun, designed to operate throughout the 2 to 18 GHz frequency band, is described for both up-converter and down-converter mixer designs.<>
  • Keywords
    III-V semiconductors; field effect integrated circuits; gallium arsenide; microwave integrated circuits; mixers (circuits); waveguide components; 180 degrees phase shift; 2 to 18 GHz; GaAs processing; active center-tapped baluns; balun topology; common gate; common source circuit techniques; design band; diode rings; double balanced multi-octave bandwidth mixers; down-converter; planar monolithic circuit technology; up-converter; Circuits; FETs; Frequency; Gallium arsenide; Impedance matching; Instruments; Mixers; Schottky diodes; Semiconductor diodes; Transformers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1988. Digest of Papers., IEEE 1988
  • Conference_Location
    New York, NY, USA
  • Type

    conf

  • DOI
    10.1109/MCS.1988.197292
  • Filename
    197292