DocumentCode
3009634
Title
Broadband monolithic single and double ring active/passive mixers
Author
Pavio, A.M. ; Halladay, R.H. ; Bingham, S.D. ; Sapashe, C.A.
Author_Institution
Texas Instrum. Inc., Dallas, TX, USA
fYear
1988
fDate
24-25 May 1988
Firstpage
71
Lastpage
74
Abstract
Several double balanced multi-octave bandwidth mixers, comprised of active center-tapped baluns and diode rings are discussed that were fabricated using planar monolithic circuit technology. This novel balun topology uses common gate and common source circuit techniques, so that an ideal 180 degrees phase shift occurs for the signals present between the upper and lower halves of the circuit. The balun exhibits excellent balance through the design band on 2-18 GHz. The performance of a center-tapped balun, designed to operate throughout the 2 to 18 GHz frequency band, is described for both up-converter and down-converter mixer designs.<>
Keywords
III-V semiconductors; field effect integrated circuits; gallium arsenide; microwave integrated circuits; mixers (circuits); waveguide components; 180 degrees phase shift; 2 to 18 GHz; GaAs processing; active center-tapped baluns; balun topology; common gate; common source circuit techniques; design band; diode rings; double balanced multi-octave bandwidth mixers; down-converter; planar monolithic circuit technology; up-converter; Circuits; FETs; Frequency; Gallium arsenide; Impedance matching; Instruments; Mixers; Schottky diodes; Semiconductor diodes; Transformers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1988. Digest of Papers., IEEE 1988
Conference_Location
New York, NY, USA
Type
conf
DOI
10.1109/MCS.1988.197292
Filename
197292
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