DocumentCode :
3009675
Title :
X-band monolithic variable gain series feedback LNA
Author :
Heston, D.D. ; Lehmann, R.E.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
fYear :
1988
fDate :
24-25 May 1988
Firstpage :
79
Lastpage :
81
Abstract :
A description is given of an X-band monolithic four-stage low-noise amplifier (LNA) using series feedback that has demonstrated a 1.8-dB noise figure with 33.8-dB gain and greater than 40-dB gain control capability. This design features single-gate and dual-gate FETs (DGFETs) on the same chip. Gain control is achieved without degradation of input or output VSWR (voltage standing-wave ratio). The two input stages use single-gate FETs to achieve minimum noise figure, while the output stages use DGFETs for gain control capability.<>
Keywords :
feedback; field effect integrated circuits; gain control; microwave amplifiers; microwave integrated circuits; 1.8 dB; 33.8 dB; X-band monolithic four-stage low-noise amplifier; dual-gate FETs; gain control capability; noise figure; series feedback; single gain FETs; variable gain; voltage standing-wave ratio; Degradation; FETs; Feedback; Gain control; Impedance; Low-noise amplifiers; Noise figure; Performance gain; Stability; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1988. Digest of Papers., IEEE 1988
Conference_Location :
New York, NY, USA
Type :
conf
DOI :
10.1109/MCS.1988.197294
Filename :
197294
Link To Document :
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