DocumentCode
3009729
Title
A Q-band monolithic three-stage amplifier
Author
Yonaki, J. ; Aust, M. ; Nakano, K. ; Dow, G. ; Liu, L.C.T. ; Hsieh, E. ; Dia, R. ; Yen, H.C.
Author_Institution
TRW, Redondo Beach, CA, USA
fYear
1988
fDate
24-25 May 1988
Firstpage
91
Lastpage
94
Abstract
A Q-band high-electron-mobility transistor (HEMT) amplifier was designed and fabricated. This three-stage circuit utilizes 0.2- mu m*60- mu m micron HEMT devices. The amplifier has a measured gain of greater than 10 dB from 42 to 47.5 GHz and a peak gain of 16 dB at 44.5 GHz.<>
Keywords
field effect integrated circuits; high electron mobility transistors; microwave amplifiers; microwave integrated circuits; 10 to 16 dB; 42 to 47.5 GHz; Q-band HEMT amplifier; Q-band monolithic three-stage amplifier; gain; Circuit synthesis; Distributed parameter circuits; HEMTs; Metal-insulator structures; Microwave circuits; Millimeter wave circuits; Millimeter wave communication; Millimeter wave transistors; Network synthesis; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1988. Digest of Papers., IEEE 1988
Conference_Location
New York, NY, USA
Type
conf
DOI
10.1109/MCS.1988.197297
Filename
197297
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