W-band high-gain amplifier using InP dual-gate HEMT technology

Author

van der Zanden, K. ; Baeyens, Y. ; Van Hove, M. ; Schreurs, D. ; De Raedt, W. ; Van Rossum, M.

Author_Institution

IMEC, Leuven, Belgium

fYear

1997

fDate

11-15 May 1997

Firstpage

249

Lastpage

252

Abstract

High Electron Mobility Transistors (HEMTs) based on InP have proven to be the best performing three terminal devices at millimetre frequencies. This makes them an attractive alternative for MESFET technology to be incorporated in monolithic microwave integrated circuits (MMIC) with operating frequencies up to 100 GHz and beyond. In this paper we first present a coplanar technology for fabrication of InP HEMTs as well as passive components, involved in MMICs. A W-band high-gain amplifier based on this technology was designed and realised and results are presented, demonstrating the capabilities of InP HEMTs at frequencies in the range of 100 GHz

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; field effect MMIC; indium compounds; integrated circuit technology; millimetre wave amplifiers; 100 GHz; InP; InP dual-gate HEMT; MMIC; W-band high-gain amplifier; coplanar technology; fabrication; high electron mobility transistor; millimetre frequency; passive component; three terminal device; Frequency; HEMTs; Indium phosphide; Integrated circuit technology; MESFET integrated circuits; MMICs; MODFETs; Microwave devices; Microwave integrated circuits; Microwave technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600111

Filename

600111