X-band and Ka-band monolithic GaAs PIN diode variable attenuation limiters

Author

Seymour, D.J. ; Heston, D.D. ; Lehmann, R.E.

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

fYear

1988

fDate

24-25 May 1988

Firstpage

147

Lastpage

150

Abstract

A description is given of monolithic GaAs p-i-n diode limiter circuits demonstrating 20 dB of variable attenuation at X-band and Ka-band while maintaining under 15:1 input voltage standing-wave ratio (VSWR). Insertion loss is 0.5 dB at 10 GHz and 1.4 dB at 36.5 GHz in the 0-mA bias condition. Passive limiting provides 7 dB of isolation at radio-frequency (RF) powers up to 1.5 W (30% duty cycle). The process used to fabricate the variable attenuation limiter is compatible with FET circuits, allowing integration of other MMIC components on the same substrate for future single-chip radar front ends. Several of these circuits have been fabricated and RF tested. Fabrication, circuit design, and RF performance are discussed.<>

Keywords

III-V semiconductors; gallium arsenide; microwave integrated circuits; microwave limiters; monolithic integrated circuits; radar equipment; 0.5 dB; 1.4 dB; 1.5 W; 10 GHz; 36.5 GHz; GaAs; Ka-band; MMIC components; PIN diode variable attenuation limiters; RF performance; RF powers; X-band; circuit design; input voltage standing-wave ratio; insertion loss; isolation; p-i-n diode limiter circuits; single-chip radar front ends; Attenuation; Circuit testing; FET circuits; Gallium arsenide; Insertion loss; MMICs; P-i-n diodes; Radar; Radio frequency; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1988. Digest of Papers., IEEE 1988

Conference_Location

New York, NY, USA

Type

conf

DOI

10.1109/MCS.1988.197310

Filename

197310