Title :
A 35 GHz monolithic MESFET LNA
Author :
Bandla, S. ; Dawe, G. ; Bedard, C. ; Tayrani, R. ; Shaw, D. ; Raffaelli, L. ; Goldwasser, R.
Author_Institution :
Gamma Monolithics, Woburn, MA, USA
Abstract :
The design and fabrication of a state-of-the-art 35-GHz monolithic low-noise amplifier (LNA) is briefly described. The amplifier, with 6.5-dB gain, 4-dB noise figure, and 10-dBm power output at 1-dB gain compression, is based on a 0.25- mu m*200- mu m molecular-beam epitaxy (MBE)-grown MESFET. Device, circuit design, fabrication details, and test results are presented.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; microwave amplifiers; microwave integrated circuits; 35 GHz; 4 dB; 6.5 dB; GaAs; MBE grown MESFET; circuit design; gain compression; monolithic low-noise amplifier; power output; Circuit testing; Fabrication; Gain; Gallium arsenide; Gold; MESFETs; Millimeter wave circuits; Millimeter wave measurements; Millimeter wave radar; Millimeter wave technology;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1988. Digest of Papers., IEEE 1988
Conference_Location :
New York, NY, USA
DOI :
10.1109/MCS.1988.197311
