DocumentCode
3010367
Title
Electrical and optical properties of InGaAsSb/GaSb
Author
Pödör, Balint ; Horvath, Zsolt Jozsef ; Rakovics, Vilmos
Author_Institution
Kando Kalman Fac. of Electr. Eng., Budapest Tech, Budapest, Hungary
fYear
2009
fDate
13-17 May 2009
Firstpage
1
Lastpage
4
Abstract
InGaAsSb layers were grown on GaSb substrates by liquid phase epitaxy. The variation of the bandgap with composition was determined and a new value for the bandgap bowing parameter is proposed. Mechanisms of the current conduction process in Au/InGaAsSb Schottky barrier structures were determined as well as the value of the Schottky barrier heights.
Keywords
III-V semiconductors; Schottky barriers; electrical conductivity; energy gap; gallium arsenide; gallium compounds; gold; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; semiconductor-metal boundaries; Au-InGaAsSb; GaSb; InGaAsSb-GaSb; Schottky barrier structures; bandgap; current conduction process; electrical properties; liquid phase epitaxy; optical properties; Epitaxial growth; Gold; Lattices; Materials science and technology; Photonic band gap; Schottky barriers; Semiconductor materials; Solids; Substrates; X-ray diffraction;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics Technology, 2009. ISSE 2009. 32nd International Spring Seminar on
Conference_Location
Brno
Print_ISBN
978-1-4244-4260-7
Type
conf
DOI
10.1109/ISSE.2009.5206952
Filename
5206952
Link To Document