Multilevel gold metallization by use of selective W-CVD and polyimide siloxane film

Author

Mikagi, K. ; Homma, T. ; Katoh, T. ; Tsunenari, K. ; Murao, Y.

Author_Institution

NEC Corp., Kanagawa, Japan

fYear

1989

fDate

12-13 Jun 1989

Firstpage

33

Lastpage

39

Abstract

Multilevel gold (Au) metallization was realized for high-speed VLSI devices by a novel combination of selective tungsten CVD (W-CVD) with electroplated Au and a polyimide siloxane (PSI) film developed by the authors. Selective W-CVD was applied to overcome the problem of poor adhesion between Au wiring and PSI film as well as to fill vias. Silane (SiH₄) reduced selective W-CVD application to Au wiring and an organic dielectric film (PSI) for VLSI devices have been demonstrated for the first time

Keywords

VLSI; chemical vapour deposition; electroplated coatings; gold; integrated circuit technology; metallisation; polymer films; tungsten; Au-W; adhesion; electroplated Au; high-speed VLSI devices; multilevel metallisation; organic dielectric film; polyimide siloxane film; selective CVD; via filling; Adhesives; Electric resistance; Gold; Hydrogen; Metallization; Polyimides; Surface morphology; Surface treatment; Very large scale integration; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Multilevel Interconnection Conference, 1989. Proceedings., Sixth International IEEE

Conference_Location

Santa Clara, CA

Type

conf

DOI

10.1109/VMIC.1989.78073

Filename

78073