DocumentCode
3010429
Title
Model-adaptable MOSFET parameter extraction method using a common intermediate model
Author
Kondo, Masaki ; Onodera, Hidetoshi ; Tamaru, Keikichi
Author_Institution
Dept. of Electron., Kyoto Univ., Japan
fYear
1994
fDate
19-23 Sep 1994
Firstpage
323
Lastpage
326
Abstract
In this paper, a model-adaptable MOSFET parameter extraction method is discussed. A salient feature of the method is that model dependency of initial value estimation, which is crucial for successful extraction with a numerical optimization technique, is eliminated as much as possible by introducing an intermediate model. We have verified the effectiveness of the method by adopting it to major SPICE models
Keywords
MOSFET; SPICE; circuit analysis computing; optimisation; semiconductor device models; MOSFET parameter extraction method; SPICE models; common intermediate model; initial value estimation; model-adaptable parameter extraction; numerical optimization technique; Circuit simulation; Costs; Curve fitting; Logic; MOSFET circuits; Optimization methods; Parameter estimation; Parameter extraction; SPICE; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
ASIC Conference and Exhibit, 1994. Proceedings., Seventh Annual IEEE International
Conference_Location
Rochester, NY
Print_ISBN
0-7803-2020-4
Type
conf
DOI
10.1109/ASIC.1994.404548
Filename
404548
Link To Document