Structural, electrical and surface static charge investigation of TiO2 thin films doped with different amount of vanadium

In this work structural, electrical and antistatic properties of TiO₂ thin films doped with different amount of V have been presented. It was shown that the doped thin films are semiconductors in room temperature. The amount of V dopant has a great influence on resistivity of prepared thin films similarly as annealing at 400degC. The time of static charge dissipation from the thin films surface dropped from 1.284 s (for undoped TiO₂) to 0.508 s (for doped with V). Although variation in the amount of V dopant in the range from 19 to 23 at.% results in three orders of magnitude change of resistivity, all doped thin films displayed similar antistatic properties.