The effect of impurity profile and oxygen on the peak-to-valley ratio of heterostructure interband tunneling diodes (HITD)

Author

El-Zein, N. ; Maracas, G.N. ; Harris, G. ; Kramer, G. ; Goronkin, H.

Author_Institution

Phoenix Corp. Res. Labs., Motorola Inc., Tempe, AZ, USA

fYear

1997

fDate

11-15 May 1997

Firstpage

261

Lastpage

263

Abstract

We present work on the performance of HITDs. SIMS and other experimental techniques (TEM, and Polaron) are used to study the effect of dopant compensation and dopant diffusion into the well regions, on the I-V characteristic and the peak to valley ratio (PVR) of the HITDs. The data shows an exponential dependence of the PVR on oxygen concentration in the sample. It also shows that the presence of doping impurities in the well region (which is determined using SIMS analysis) has a dramatic effect on the PVR and the peak current density. Finally, it is mentioned that simulated results confirm the effect of these two mechanisms on the performance of the HITDs and an attempt on studying each separately is made

Keywords

diffusion; doping profiles; oxygen; resonant tunnelling diodes; secondary ion mass spectra; semiconductor quantum wells; transmission electron microscopy; HITD; I-V characteristics; Polaron; SIMS; TEM; dopant compensation; dopant diffusion; heterostructure interband tunneling diode; impurity profile; oxygen concentration; peak current density; peak-to-valley ratio; quantum well; simulation; Circuits; Current density; Doping; Gold; Impurities; Indium phosphide; Oxygen; Semiconductor diodes; Semiconductor materials; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1997., International Conference on

Conference_Location

Cape Cod, MA

ISSN

1092-8669

Print_ISBN

0-7803-3898-7

Type

conf

DOI

10.1109/ICIPRM.1997.600116

Filename

600116