Title :
A 2V BiCMOS receiver chip for L-S-C band personal networks
Author :
Madihian, Mohammad ; Bak, Emanuel ; Imai, Kiyotaka ; Yoshida, Hiroshi ; Kinoshita, Yasushi ; Yamazaki, Tohru
Author_Institution :
C&C Res. Lab., NEC Corp., Japan
Abstract :
This paper concerns with the design and performance results of a receiver chip developed for personal networks applications utilizing a BiCMOS technology. The receiver, which integrates a bipolar RF amplifier, a BiCMOS simplified Gilbert mixer, and an NMOS IF amplifier, on a single chip, is designed to operate at 2 V over 1.8-5.4 GHz frequency band with a total power dissipation of 18 mW. Maximum conversion gain, LO-IF and RF-IF isolation are, respectively, 34 dB, 40 dB, and 32 dB.
Keywords :
BiCMOS analogue integrated circuits; UHF integrated circuits; land mobile radio; personal communication networks; radio receivers; 1.8 to 5.4 GHz; 18 mW; 2 V; 34 dB; BiCMOS receiver chip; Gilbert mixer; L-S-C band personal networks; LO-IF isolation; NMOS IF amplifier; RF-IF isolation; bipolar RF amplifier; conversion gain; BiCMOS integrated circuits; Equivalent circuits; Isolation technology; MOS devices; MOSFETs; Mixers; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Voltage;
Conference_Titel :
VLSI Circuits, 1995. Digest of Technical Papers., 1995 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
0-7800-2599-0
DOI :
10.1109/VLSIC.1995.520699
