Photoelectrical characteristics of TiO2-Si heterostructures

Author

Kalygina, V.M. ; Egorova, I.S. ; Prudaev, I.A. ; Tolbanov, O.P.

Author_Institution

Functional Electron. Lab., Tomsk State Univ., Tomsk, Russia

fYear

2015

fDate

21-23 May 2015

Firstpage

1

Lastpage

4

Abstract

The influence of thermal annealing on photoelectrical properties of TiO₂-n-Si structures is studied. It is shown that growth of reverse current during radiation begins at threshold voltage U_t. Its value depends on annealing temperature. Persistent photoconductivity is observed only in such TiO₂-Si structures if the oxide titanium film contains anatase crystallites. Photoconductivity is observed in such TiO₂-Si structuresif the oxide titanium film contains anatase crystallites.

Keywords

annealing; crystallites; photoconductivity; silicon; titanium compounds; TiO₂-Si; anatase crystallite; photoconductivity; photoelectrical characteristic; reverse current; thermal annealing; threshold voltage; titanium oxide film; titanium oxide-silicon heterostructure; Annealing; Electric potential; Films; Logic gates; Photoconductivity; Silicon; Titanium; charge carrier generation; current-voltage characteristics; persistent photoconduction; photocurrent; thermal annealing; titanium oxide films;

fLanguage

English

Publisher

ieee

Conference_Titel

Control and Communications (SIBCON), 2015 International Siberian Conference on

Conference_Location

Omsk

Print_ISBN

978-1-4799-7102-2

Type

conf

DOI

10.1109/SIBCON.2015.7147085

Filename

7147085