DocumentCode :
3011054
Title :
Photoelectrical characteristics of TiO2-Si heterostructures
Author :
Kalygina, V.M. ; Egorova, I.S. ; Prudaev, I.A. ; Tolbanov, O.P.
Author_Institution :
Functional Electron. Lab., Tomsk State Univ., Tomsk, Russia
fYear :
2015
fDate :
21-23 May 2015
Firstpage :
1
Lastpage :
4
Abstract :
The influence of thermal annealing on photoelectrical properties of TiO2-n-Si structures is studied. It is shown that growth of reverse current during radiation begins at threshold voltage Ut. Its value depends on annealing temperature. Persistent photoconductivity is observed only in such TiO2-Si structures if the oxide titanium film contains anatase crystallites. Photoconductivity is observed in such TiO2-Si structuresif the oxide titanium film contains anatase crystallites.
Keywords :
annealing; crystallites; photoconductivity; silicon; titanium compounds; TiO2-Si; anatase crystallite; photoconductivity; photoelectrical characteristic; reverse current; thermal annealing; threshold voltage; titanium oxide film; titanium oxide-silicon heterostructure; Annealing; Electric potential; Films; Logic gates; Photoconductivity; Silicon; Titanium; charge carrier generation; current-voltage characteristics; persistent photoconduction; photocurrent; thermal annealing; titanium oxide films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Control and Communications (SIBCON), 2015 International Siberian Conference on
Conference_Location :
Omsk
Print_ISBN :
978-1-4799-7102-2
Type :
conf
DOI :
10.1109/SIBCON.2015.7147085
Filename :
7147085
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3011054
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