Temperature dependence of dark current features of CdTe thin-film solar cells

Author

Werner, Barbara ; Kolodenny, Wlodzimierz ; Dziedzic, Andrzej

Author_Institution

Fac. of Microsyst. Electron. & Photonics, Wroclaw Univ. of Technol., Wroclaw, Poland

fYear

2009

fDate

13-17 May 2009

Firstpage

1

Lastpage

3

Abstract

In the paper results of investigating the characteristic features of temperature dependence of electrical parameters in dark I-V measurements for CdTe thin-film PV (photovoltaic) modules are presented. The purpose of originating the second junction in this kind of PV modules is shown. The electrical behaviour of II-(III)-VI thin-film PV cells/modules is influenced mainly by the defect layers located at the buffer/absorber interface and in the bulk of depletion region as well as due to manufacturing process. Results presented in this paper were determined from fitting the large amount of data acquired in natural outdoor conditions during long term monitoring [1].

Keywords

II-VI semiconductors; cadmium compounds; semiconductor thin films; solar cells; CdTe; buffer/absorber interface; dark current; electrical parameters; thin-film PV cells/modules; thin-film solar cells; Condition monitoring; Dark current; Electric variables measurement; Fitting; Manufacturing processes; Photovoltaic cells; Photovoltaic systems; Solar power generation; Temperature dependence; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Technology, 2009. ISSE 2009. 32nd International Spring Seminar on

Conference_Location

Brno

Print_ISBN

978-1-4244-4260-7

Type

conf

DOI

10.1109/ISSE.2009.5207011

Filename

5207011