Title :
Structural characterization of distributed feedback laser diodes with undulation of strained-layer MQW
Author :
Kim, Ho Min ; Kim, Jong Soo ; Oh, D.K. ; Pyun, K.E.
Author_Institution :
Sect. of Optoelectron., Electron. & Telecommun. Res. Inst., Taejon
Abstract :
The InGaAsP/InGaAs strained-layer multiple quantum well (SL-MQW) structures for 1.55 μm distributed feedback laser diodes have been grown by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The undulation or deformation of SL-MQW layers grown on the corrugated InP substrates has been observed, and it was dependent upon AsH3 partial pressure and heat-up time prior to the 1st active layer growth. The structural qualities of SL-MQW are discussed in-depth using DCXRC, PL, TEM, and SEM
Keywords :
III-V semiconductors; X-ray diffraction; distributed feedback lasers; gallium arsenide; indium compounds; photoluminescence; quantum well lasers; scanning electron microscopy; transmission electron microscopy; vapour phase epitaxial growth; 1.55 micron; DCXRC; InGaAsP-InGaAs; InP; LP-MOVPE growth; PL; SEM; TEM; corrugated substrate; deformation; distributed feedback laser diode; low-pressure metalorganic vapor phase epitaxy; strained-layer multiple quantum well structure; undulation; Diode lasers; Distributed feedback devices; Epitaxial growth; Gratings; Holography; Indium phosphide; Light sources; Quantum well devices; Satellites; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600119
