Title :
Warpage of InP wafers
Author :
Fukui, T. ; Kurita, H. ; Makino, N.
Author_Institution :
Isohara Plant, Japan Energy Corp., Ibaraki, Japan
Abstract :
InP wafer warpage induced during its processing has been investigated. Magnitude and shape of wafer warpage caused by surface damage, which is presumed to give tensile stress to wafer, was influenced by its dopant. After MOCVD growth some wafer warpage changed but only a little and smooth surfaces of epi-layer were achieved
Keywords :
CVD coatings; III-V semiconductors; indium compounds; internal stresses; semiconductor epitaxial layers; semiconductor technology; InP; InP wafer warpage; MOCVD growth; dopant; epilayer; semiconductor processing; surface damage; tensile stress; Crystals; Etching; Indium phosphide; Iron; Laboratories; MOCVD; Shape; Stress; Tin; Zinc;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600121
