Title :
A 0.18µm CMOS narrow-band LNA linearization using digital base-band post-distortion
Author :
Umoh, Ifiok ; Al-Attar, Talal ; Ogunfunmi, Tokunbo
Author_Institution :
Dept. of Electr. Eng., Santa Clara Univ., Santa Clara, CA, USA
Abstract :
In this paper, a novel digital base-band post-distorter is proposed to compensate for nonlinearities in low noise amplifiers. Though high gain, good input matching and low noise (low noise figure) are important factors, linearity and low power combined with these factors is most desirable. The proposed post-distorter achieves these factors by an indirect learning architecture at base-band to compensate for nonlinearities. The low noise amplifier was designed in the standard 0.18 μm CMOS technology. It achieved a 8dB improvement in linearity with respect to the input power.
Keywords :
CMOS integrated circuits; distortion; linearisation techniques; low noise amplifiers; CMOS narrow-band LNA linearization; CMOS technology; digital base-band post-distortion; low noise amplifiers; size 0.18 mum; CMOS integrated circuits; Linearity; Mathematical model; Noise; Nonlinear distortion; Polynomials; Transistors;
Conference_Titel :
Signals, Systems and Computers (ASILOMAR), 2010 Conference Record of the Forty Fourth Asilomar Conference on
Conference_Location :
Pacific Grove, CA
Print_ISBN :
978-1-4244-9722-5
DOI :
10.1109/ACSSC.2010.5757550